silicon power transistors the mj21195 and mj21196 utilize perforated emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. ? total harmonic distortion characterized ? high dc current gain h fe = 25 min @ i c = 8 adc ? excellent gain linearity ? high soa: 3 a, 80 v, 1 second maximum ratings rating sym- bol value unit collectoremitter voltage v ceo 250 vdc collectorbase voltage v cbo 400 vdc emitterbase voltage v ebo 5 vdc collectoremitter voltage 1.5 v v cex 400 vdc collector current e continuous collector current e peak (1) i c 16 30 adc base current e continuous i b 5 adc total power dissipation @ t c = 25 c derate above 25 c p d 250 1.43 watts w/ c operating and storage junction temperature range t j , t stg 65 to +200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 0.7 c/w electrical characteristics (t c = 25 c 5 c unless otherwise noted) characteristic symbol min typical max unit off characteristics collectoremitter sustaining voltage (i c = 100 madc, i b = 0) v ceo(sus) 250 e e vdc collector cutoff current (v ce = 200 vdc, i b = 0) i ceo e e 100 m adc (1) pulse test: pulse width = 5 m s, duty cycle 10%. (continued) preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 march, 2002 rev. 3 1 publication order number: mj21195/d 16 ampere complementary silicon power transistors 250 volts 250 watts mj21195 mj21196 * *on semiconductor preferred device pnp npn * case 107 to204aa (to3)
mj21195 mj21196 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typical max unit off characteristics emitter cutoff current (v ce = 5 vdc, i c = 0) i ebo e e 100 m adc collector cutoff current (v ce = 250 vdc, v be(off) = 1.5 vdc) i cex e e 100 m adc second breakdown second breakdown collector current with base forward biased (v ce = 50 vdc, t = 1 s (nonrepetitive) (v ce = 80 vdc, t = 1 s (nonrepetitive) i s/b 5 2.5 e e e e adc on characteristics dc current gain (i c = 8 adc, v ce = 5 vdc) (i c = 16 adc, v ce = 5 vdc) h fe 25 8 e e 75 baseemitter on voltage (i c = 8 adc, v ce = 5 vdc) v be(on) e e 2.2 vdc collectoremitter saturation voltage (i c = 8 adc, i b = 0.8 adc) (i c = 16 adc, i b = 3.2 adc) v ce(sat) e e e e 1.4 4 vdc dynamic characteristics total harmonic distortion at the output v rms = 28.3 v, f = 1 khz, p load = 100 w rms h fe unmatch ed (matched pair h fe = 50 @ 5 a/5 v) h fe matched t hd e e 0.8 0.08 e e % current gain bandwidth product (i c = 1 adc, v ce = 10 vdc, f test = 1 mhz) f t 4 e e mhz output capacitance (v cb = 10 vdc, i e = 0, f test = 1 mhz) c ob e e 500 pf (1) pulse test: pulse width = 300 m s, duty cycle 2% i c , collector current (amps) figure 1. typical current gain bandwidth product figure 2. typical current gain bandwidth product f, current bandwidth product (mhz) t pnp mj21195 f, current bandwidth product (mhz) t npn mj21196 i c , collector current (amps) 0.1 1.0 10 6.5 6.0 5.0 4.0 3.0 2.0 1.0 0 7.5 7.0 6.0 4.0 3.0 5.0 1.0 2.0 0.1 1.0 10 v ce = 10 v 5 v t j = 25 c f test = 1 mhz v ce = 5 v 10 v t j = 25 c f test = 1 mhz 6.5 4.5 3.5 5.5 1.5 2.5 5.5 4.5 3.5 2.5 1.5 0.5
mj21195 mj21196 http://onsemi.com 3 i b = 2 a figure 3. dc current gain, v ce = 20 v figure 4. dc current gain, v ce = 20 v figure 5. dc current gain, v ce = 5 v figure 6. dc current gain, v ce = 5 v h fe , dc current gain i c , collector current (amps) i c , collector current (amps) h fe , dc current gain h fe , dc current gain i c , collector current (amps) i c , collector current (amps) v ce , collector-emitter voltage (volts) figure 7. typical output characteristics i c , collector current (a) v ce , collector-emitter voltage (volts) figure 8. typical output characteristics i c , collector current (a) pnp mj21195 npn mj21196 h fe , dc current gain typical characteristics pnp mj21195 pnp mj21195 npn mj21196 npn mj21196 1000 100 10 100 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 20 v 1000 100 10 100 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 20 v 1000 100 10 100 10 1.0 0.1 1000 100 10 100 10 1.0 0.1 30 25 20 15 10 5.0 0 5.0 010152025 30 25 20 15 10 0 5.0 010152025 5.0 1.5 a 1 a 0.5 a i b = 2 a t j = 25 c t j = 100 c 25 c -25 c v ce = 5 v t j = 100 c 25 c -25 c v ce = 5 v 1.5 a 1 a 0.5 a t j = 25 c
mj21195 mj21196 http://onsemi.com 4 figure 9. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 10. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 11. typical baseemitter voltage i c , collector current (amps) v be(on) , base-emitter voltage (volts) figure 12. typical baseemitter voltage i c , collector current (amps) v be(on) , base-emitter voltage (volts) figure 13. active region safe operating area v ce , collector-emitter voltage (volts) i c , collector current (amps) there are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 13 is based on t j(pk) = 200 c; t c is vari- able depending on conditions. at high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second break- down. pnp mj21195 npn mj21196 typical characteristics pnp mj21195 npn mj21196 3.0 2.5 2.0 1.5 1.0 0.5 0 100 10 1.0 0.1 1.6 1.2 1.0 0.8 0.6 0.4 0 100 10 1.0 0.1 0.2 10 1.0 0.1 100 10 1.0 0.1 10 1.0 0.1 100 10 1.0 0.1 100 10 1.0 0.1 100 10 1.0 1000 t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed) t j = 25 c i c /i b = 10 v be(sat) v ce(sat) 1.4 t j = 25 c i c /i b = 10 v be(sat) v ce(sat) t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed) 10 ms 50 ms 250 ms 1 sec
mj21195 mj21196 http://onsemi.com 5 figure 14. mj21195 typical capacitance v r , reverse voltage (volts) c, capacitance (pf) figure 15. mj21196 typical capacitance v r , reverse voltage (volts) c, capacitance (pf) audio precision model one plus total harmonic distortion analyzer source amplifier 50 w 0.5 w 0.5 w 8.0 w -50 v dut dut +50 v figure 16. typical total harmonic distortion figure 17. total harmonic distortion test circuit frequency (hz) t hd , total harmonic distortion (%) 10000 1000 100 100 10 1.0 0.1 10000 1000 100 100 10 1.0 0.1 1.2 1.1 1.0 0.9 0.8 0.7 0.6 100000 10000 1000 100 10 t j = 25 c f test = 1 mhz c ib c ob t j = 25 c f test = 1 mhz c ib c ob
mj21195 mj21196 http://onsemi.com 6 package dimensions case 107 issue z to204 (to3) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t q y 2 1 u l g b v h
mj21195 mj21196 http://onsemi.com 7 notes
mj21195 mj21196 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mj21195/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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